Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit

This paper demonstrates electrical results of an integrated Si CMOS-electrostatically actuated nanoelectromechanical (NEM) relay circuit. This is an initial step towards realizing previously proposed NEM-CMOS hybrid circuits that predict various benefits compared to CMOS-only circuits. In this work, an e-beam patterned laterally actuated Pt NEM relay is fabricated at CMOS-compatible temperatures (≤ 400 °C) on top of CMOS and is driven by an on-chip CMOS inverter at V
DD
= 6 V.