First demonstration of ultrathin body c-SiGe channel FDSOI pMOSFETs combined with SiGe(:B) RSD: Drastic improvement of electrostatics (Vth,p tuning, DIBL) and transport (μ0, Isat) properties down to 23nm gate length

We hereby present for the first time a successful integration of ultrathin (3.2nm) c-Si
_0.8
Ge
_0.2
layers in Fully Depleted (FD) SOI pMOSFETs (total body thickness: 7.8nm) combined with Si
_0.7
Ge
_0.3
(:B) Raised Source-Drain. Comparisons with SOI devices show that the c-Si
_0.8
Ge
_0.2
/SOI channels enable to tune the threshold voltage by +120mV (with excellent variability performance A
_Vt
=1.47mV.μm) without SCE or DIBL degradation (60mV/V @ L=23nm). Moreover c-Si
_0.8
Ge
_0.2
/SOI combined with Si
_0.7
Ge
_0.3
(:B) RSD leads to significant gain in Access resistance (-60%), transconductance and I
_sat
(+170% & +220% @ L=23nm).