Physical mechanisms of endurance degradation in TMO-RRAM

We report, for the first time, three types of endurance failure behaviors in TMO based RRAM. New physical mechanisms are proposed to clarify the physical origins of these endurance failures. A physically-based optimized switching mode is developed to improve the endurance of TMO-RRAM. A significantly enhanced endurance of >;10
⁹
switching cycles was demonstrated in the HfO
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/TiO
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/HfO
_x
/TiO
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devices.