Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio

We present a multi-scale investigation of graphene-based transistors with a hexagonal boron-carbon-nitride (h-BCN) barrier in the channel. Our approach exploits ab-initio calculations for an accurate extraction of energy bands and tight-binding simulations in order to compute charge transport. We show that the h-BCN barrier inhibits the ambipolar behavior of graphene transistors, leading to a large I
_on
/I
_off
ratio, within the ITRS roadmap specifications for future semiconductor technology nodes.