Experimental analysis of SEL sensitiveness on Atmel MG2RT technology

Single Event Latchup (SEL) in Gate Arrays MG2 Radiation Hardened Atmel technology is examined with respect to strike of heavy ions. Radiation tests, performed at GANIL radiation facility, have been executed at high temperature by monitoring current absorption and analyzing the functionalities of the MSDRX ASIC implemented using MG2RT technology part of a TAS-I transponder core. A drastic improvement of the device SEL sensitivity is observed for high power supply voltages. In this paper, we describe the performed experiments, the experimental setup and we provide an accurate investigation of the obtained results.