A comprehensive analytical approach for the evaluation of the P,R and C noise coefficients of InAlAs/InGaAs DG-HEMT

The paper presents a comprehensive and accurate charge control based approach for the evaluation of the mean square gate and drain noise current and the P, R & C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT which play a vital role in the determination of the various other important noise performance parameters including the noise conductance and the minimum noise figure. The effect of gate length on the gate voltage behaviour of the P, R & C noise coefficients is studied. The analytical results obtained are compared and are found to correspond well with the ATLAS device simulation results.