Circuit of an EEPROM sense amplifier in 0.18 µm CMOS technology

A sense amplifier for EEPROM memory competent of functioning under a very low-voltage power supply is presented. The sense amplifier was designed for an EEPROM realized with a 0.18-µm CMOS technology. Key design techniques of power dissipation optimization for EEPROM memory are described. The topology of the sense amplifier uses a pure voltage-mode comparison allowing power supply at 1 V to be used. Simulation results showed that the circuit is able to work under a low power and also the size of the circuit is reduced due to the 0.18-µm CMOS process.