Hydrogen gas sensors based on thermally evaporated nanostructured MoO3 Schottky diode: A comparative study

In this paper, a comparative study of Pt/nanostructured MoO
₃
/SiC Schottky diode based hydrogen gas sensors is presented. MoO
₃
nanostructured films with three different morphologies (nanoplatelets, nanoplatelets-nanowires and nano-flowers) were deposited on SiC by thermal evaporation. We compare the current-voltage characteristics and the dynamic response of these sensors as they are exposed to hydrogen gas at temperatures up to 250°C. Results indicate that the sensor based on MoO
₃
nano-flowers exhibited the highest sensitivity (in terms of a 5.79V voltage shift) towards 1% hydrogen; while the sensor based on MoO
₃
nanoplatelets showed the quickest response (t
_90%
-40s).