Multibit Operation of Nanoelectromechanical Memory Cells

The multibit operation of nanoelectromechanical memory cells has been modeled analytically. Based on the modeling results, the design guideline for stable multibit operation has been presented. Large release voltage shift can be obtained by decreasing the initial gap between the charge-trapped layer and beam
$(t_{{\rm gap}1})$
, the initial gap between the assistant word line and beam
$(t_{{\rm gap}2})$
, beam thickness
$(t_{\rm beam})$
, and Young's modulus
$(E)$
or by increasing the effective oxide thickness
$(t_{{\rm ox}, {\rm eff}})$
and beam length
$(L_{\rm beam})$
.