Uniform diameter and pitch co-design of 16nm n-type carbon nanotube channel arrays for VLSI

Uniform nanotube diameter and nanoarray pitch are essential for low-cost and high-yield manufacturability of billions of carbon nanotube MOSFETs (CN-MOSFETs) with various sizes on a single chip. In this paper, the optimum uniform diameter and pitch of 16 nm n-type CN-MOSFETs are determined with two different substrate bias voltages for a wide range of transistor sizes. A new quality metric is evaluated to identify the optimum device profiles suitable for very large scale integration.