Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: Determination of the optimal substrate and pattern orientation

Halide vapor phase epitaxial growth of GaP was performed on GaP half- and orientation — patterned templates. This allowed optimization of substrate material, patterning approach and pattern orientation, which resulted in growth of +350 μm thick quasi-phase matched GaP with successful replication of the initial patterns.