Energy consumption optimization in nonvolatile silicon nanocrystal memories

In this paper we investigate the energy consumption of Discrete-Trap Silicon Nanocrystal (Si-nc) Nonvolatile Memory Cell during Channel Hot Electron programming operation. We compare this cell with a Floating Gate Flash in order to evaluate the current absorption and the energy consumption under different conditions. Using a commercial TCAD simulator, a good agreement between data and simulations is obtained and the involved mechanisms are analysed. Then we propose a solution to optimize the programming window and energy consumption trade-off for Si-nc Flash Cells.