Electric and optical properties of In2−x−ySnxZnyO3−δ thin films

Some p-type and n-type ZITO transparent and conductive films of 300 nm thickness, have been deposited by vacuum thermal evaporation and oxidation in air on different substrates. The electrical and optical properties of the thin films have been studied as a function of chemical composition, substrate nature and annealing conditions. X-ray diffraction and scanning electron microscopy were used in order to investigate thin film structures. The electrical conductivity and transmittance of n-type thin films are higher than electrical conductivity and transmittance of p-type thin films.