Electrical and Magnetic Properties of Higher Manganese Silicide Nanostructures

Higher manganese silicide, Mn
$_{15}$
Si
$_{26}$
, nanostructures were grown using CVD using a coordination compound precursor. These nanostructures exhibit p-type semiconducting behavior. They also exhibit a nonzero magnetic moment even at room temperature and the magnetic transition temperature appears to be near 330 K.