X-band T/R module based on GaN MMICs power amplifier

In this paper a novel X-band T/R module based on a GaN-HEMT MMICs high power amplifier chain, comprising a driver amplifier (DA) and a high power amplifier (HPA) will be presented. A multifunction chip is integrated in the T/R module to reduce the size and weight. The DC control electronics is designed based on multi-layer low temperature co-fired ceramic (LTCC) technology. Output power level of 43 dBm (20 W) for the T/R module is measured.