Development of Monte Carlo Modeling for Neutron-Induced Failures of Trench FieldStop IGBT

Based on experimental results under neutron beam and on analysis using Monte Carlo simulation, we show that the sensitivity to SEB/SEL of Trench Gate Fieldstop IGBT can be modeled by an RPP assumption. The minimum critical charge for triggering a destructive single event on a Trench Gate Fieldstop IGBT is found to be about 90 fC.