A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power

An efficient power amplifier (PA) is demonstrated in a 0.12-μm silicon germanium (SiGe) BiCMOS process at 45 GHz. The amplifier is a single stage common-emitter amplifier (CE). The voltage handling capability of the amplifier is extended by a low impedance biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 25 % at an output power of 13 dBm in linear operation and 31% in class B mode at an output power of 13.3 dBm. The maximum saturated output power P
_sat
is 14.8 dBm, at which the circuit consumes 77 mW. The chip occupies an area of 0.27 mm
²
including pads.