TID in a Switched-Capacitor FPAA: Degradation and Partial Inactivity Windows Due to Compensating Effects in MOS Transistors

Results of irradiation experiments on a 0.6 μm switched-capacitor analog array indicate a sudden recovery of the FPAA performance degradation during the irradiation phase. The main parameter considered to check the performance of the device is the total harmonic distortion of the processed analog signals. The observed recovery is associated with the compensating effects of oxide and interface trapped charge in the NMOS transistors of the array in a particular window of the accumulated dose received by the device. Experimental results are discussed and simulations performed to confirm the hypotheses for the observed phenomenon.