Ultra-thin SOI for 20nm node and beyond

Recent UTBB device data at sub-25 nm gate length demonstrate good performance, small V
_T
variation and excellent low power operation. In addition, very uniform Soitec Xtreme SOI™ product substrates are now available and compliant with device requirements. Thus the level of maturity of UTBB devices and substrates makes it possible for introduction at 20 nm node. Multiple options at the substrate level to further boost the performance open up the path to improve performance for future nodes.