Semiconductor nanoparticles for electronic device integration on foils

Semiconducting nanoparticles allow the integration of field effect transistors by spin coating of a dispersion onto a pre-integrated metal structure for the electrodes. Thin film transistors with inverted coplanar setup show mobilities of up to 0.05 cm
²
/Vs in case of silicon nanoparticles, 0.1 cm
²
/Vs in case of zinc oxide material. Transistors consisting of a single nanoparticle are demonstrated, but the yield is low. Due to the low temperature processing (<;200°C), nanoparticle transistor integration on plastic substrates is possible. First inverter structures consisting of two nanoparticle field effect transistors integrated on oxidized silicon wafers are demonstrated.