VHDL-AMS model of a dual gate graphene FET

We propose a VHDL-AMS model for a dual gate bilayer graphene field effect transistor (GFET). The GFET model in consideration is based on closed analytical derivations for a graphene device model. The analytical derivations describe the I-V characteristics of the transistor operating at the various regions. An up-kick in the drain current at high drain voltage which is pronounced during saturation is being modelled by a displacement and a saturation current. The model's drain current shows a good agreement with published experimental data.