Investigation of temperature dependence of contact resistance for Au-Ti-Pd2Si-n+-Si OHMIC contacts subjected to microwave irradiation

Based on a theoretical analysis of temperature dependence of contact resistance R
_C
for Au-Ti-Pd
₂
Si-n
⁺
-Si oh-mic contact, a current flow mechanism is proposed that explains the experimentally observed R
_C
growth with temperature in the 100-380 K temperature range. It is shown that microwave treatment of such contacts leads to reduction of R
_C
values spread over the wafer and decrease of R
_C
, while R
_C
growth with temperature in the 100-380 K temperature range retains.