Automated model complexity reduction using the HICUM hierarchy

Many of today's high-frequency systems are implemented using heterojunction bipolar transistor (HBT) technology. For efficient circuit design, a compact modeling methodology for HBTs providing models with different complexity is of great interest. In particular for simulating larfe-scale circuits a simplified compact model such as HICUM/Level0 is beneficial and attractive. A methodology for generating the parameters for the simplified model from existing HICUM/Level2 parameters is introduced, and accurate modeling results with respect to experimental data over a wide temperature range are demonstrated.