Nanoanalysis of lanthanum scandate MOS capacitors addressing reliability after local current flow

The capacitance of series LaScO
₃
-SiO
₂
capacitors on Si substrates has been investigated in the same DC bias range and at the same operation frequencies by admittance and scanning microwave microscopy (SMM) measurements on the 10
^-3
cm
²
scale and 10
²
nm
²
scale, respectively. By SMM measurements it is shown that changes in the series capacitance due to local current flows persist and that such nanoscale changes can be induced by slow speed SMM scans at a constant DC bias.