Wilkinson splitter design for LTE applications based on Hi-Q silicon technology

This paper presents a new design of a small integrated passive device (IPD)------Wilkinson splitter------for China TD-LTE band application. The splitter was designed and simulated in On-Semi Hi-Q technology and was realized in similar CMOS process. Measurement results agree quite well with simulation. This new type of splitter has a very small size and a much smaller thickness than its counterpart using LTCC design.