1.3 μm InAs/GaAs quantum dot lasers on Si substrates with current injection across direct-bonded GaAs/Si heterointerfaces

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate and layer-transferred onto a Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This broad-area Fabry-Perot laser operates with current injection through the GaAs/Si interface and exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 205 A/cm
²
, the lowest among lasers on silicon.