A gallium-nitride switched-capacitor circuit using synchronous rectification

The promise of wide band-gap materials has the potential to usher in a new era of power electronics not seen since the introduction of the Silicon (Si) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT). The physical characteristics of Gallium Nitride (GaN) make it theoretically superior to Si in such aspects as temperature of operation, switching speed, and efficiency. While much research has been conducted on the High Electron Mobility Transistor (HEMT) made of GaN and Aluminum Gallium Nitride (AlGaN), the discussion of third quadrant operation is sparse. Furthermore, the merits of the AlGaN/GaN HEMT, in particular its switching speed, make it suitable for switched-capacitor circuits. Thus, this paper focuses on the AlGaN/GaN HEMT's third quadrant operation and demonstrates this functionality in a switched capacitor circuit.