An efficient resonant gate drive scheme for high frequency applications

Gallium Nitride (GaN) and Silicon Carbide (SiC) devices have been found to withstand high voltages without showing degradation [1] and can be switched at high frequencies making them attractive for high power drives. Though GaN/SiC devices can be operated at high temperature and high frequencies, it is important to develop gate drive circuits to turn ON and OFF these devices efficiently at high speeds. This paper proposes a resonant gate drive circuit that aims at reducing the power loss associated with high frequency switching of power IGBT/MOSFETs. The proposed circuit is compared with traditional gate drive circuits from power consumption and switching speed points of view. Experimental results are given to illustrate the concept.