Characterization and Modeling of Parasitic Field-Oxide Transistors for Use in Radiation Hardening by Design

Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geometries. Accurate modeling of parasitic devices through determination of effective width/length ratios supports compact model development for use in radiation-hardening-by-design activities.