Photoerasable Organic Nonvolatile Memory Devices Based on Hafnium Silicate Insulators

We have prepared photoerasable organic nonvolatile memories using high-dielectric (high-
$k$
) hafnium silicate as device insulators. The high-
$k$
material can effectively lower the operating voltage of the organic memory devices. The nonvolatile memory can be written by applying a gate bias and be effectively erased by photon illumination. The spectral study of the photoinduced recovery effect indicated that the erasing mechanism should be relevant to the recombination between the trapped charges and the photogenerated exctions.