A K-band low noise amplifier with high linearity and low power consumption

The aim of this paper is to use Taiwan semiconductor manufacturing company (TSMC) 0.18 µm CMOS technology process to complete an ultra wideband (UWB) low noise amplifier (LNA) for K-band. This CMOS LNA with a cascade circuits can enhance the gain and bandwidth, source degeneration with inductor can suppress the Miller effect, and use the RC feedback network to maintain the gain flatness. The K-band LNA is dissipated with 13.698 mW power and achieves an input return loss (S
11
) of −17.8 ∼ −8.58 dB, output return loss (S
22
) of −17.8 ∼ −12.65 dB, flat forward gain (S
21
) of 4.3 ± 1.2 dB, and noise figure (NF) of 4.86 ∼ 6.3 dB over the 18 ∼ 27 GHz. The chip area is only 0.692 × 0.546 mm
²
including the test pads.