Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators

Pentacene-based organic thin-film transistors (TFTs) with solution-processed barium zirconate titanate as gate dielectrics are studied. The fabricated TFTs show a high field-effect mobility of 7.31 cm
²
· V
^-1
· s
^-1
at a V
_G
of -3.6 V, a low threshold voltage of -1.60 V, and a low subthreshold slope swing of 162 mV/dec. Moreover, organic inverters with enhancement-mode load and driver are also investigated. The inverters demonstrate a high gain of 9.98, a low operating voltage of -5 V, and a low power dissipation of 1.14 μW. Very good agreements between simulation and experimental results are achieved.