Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible Substrate

Diffusion-limited Schottky junctions were fabricated at 200°C by employing a top amorphous In-Ga-Zn-O (a-IGZO)/bottom Pt electrode structure. Those fabricated on glass exhibited rectification ratios of I
_on/off
>; 10
⁸
and ideality factors close to unity n = 1.04. The temperature dependence values of current-voltage characteristics were small and not explained by a simple thermionic emission theory; instead, a percolation model explains them with an average Schottky barrier height of 1.2 eV and its distribution width of 0.13 eV. Flexible a-IGZO/Pt Schottky junctions were also demonstrated on polyimide substrates with n = 1.2 and I
_on/off
>; 10
⁵
.