The flexible compact SOI-MOSFET model HiSIM-SOI valid for any structural types

We have developed the HiSIM-SOI model which is a complete surface-potential-based compact model valid for any structural variations of SOI-MOSFETs. This work focuses on how to calculate the three surface-potential values at the FOX/SOI-layer surface, the SOI-layer/BOX surface, and the BOX/substrate surface. The Newton iteration with three variables is investigated. With good initial guesses of the three surface potentials, accurate solutions are obtained with small number of iterations. Dynamically switching depletion modes are achieved by considering all possible charges induced within the device explicitly. Furthermore, SPICE simulation of 100-stage NAND chains demonstrates stable convergence of the surface-potential Newton iteration for any bias conditions.