Radiation-Hard Dielectrics for 4H–SiC: A Comparison Between $\hbox{SiO}_{2}$ and $ \hbox{Al}_{2}\hbox{O}_{3}$

Ion implantation effects at SiO
₂
/SiC and Al
₂
O
₃
/SiC interfaces have been investigated by implanting Ar ions at the interface of oxide and SiC. Capacitance-voltage relation and breakdown properties for these dielectrics are studied before and after implantation. The results indicate that the SiO
₂
/SiC interface is sensitive to ion fluences higher than 1 × 10
¹¹
cm
^-2
, while Al
₂
O
₃
on SiC can sustain higher fluences. In addition, the breakdown of the Al
₂
O
₃
is found to be less sensitive to the ion implantation.