Metal–Oxide–High-$k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Layer

In this paper, we propose Al/SiO
₂
/Dy
₂
O
₃
/ SiO
₂
/ Si, Al/SiO
₂
/DyTi
_x
O
_y
/SiO
₂
/Si, and Al/Al
₂
O
₃
/DyTi
_x
O
_y
/SiO
₂
/Si as charge-trapping memory devices incorporating high-
k
Dy
₂
O
₃
and Ti-doped Dy
₂
O
₃
films as charge-trapping layers, and SiO
₂
and Al
₂
O
₃
films as blocking layers. The Al/Al
₂
O
₃
/DyTi
_x
O
_y
/ SiO
₂
/Si memory device exhibited a larger memory window of ~4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ~20% (measured time up to 10
⁶
s and at 85
^°
C), and better endurance (program/erase cycles up to 10
⁴
) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy
₂
O
₃
film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTi
_x
O
_y
film.