A 70-dB, 3.1–10.6-GHz CMOS amplifier in low-power 90 nm CMOS

This paper presents a novel high-gain CMOS amplifier suitable for ultra-wideband (UWB) applications. The proposed amplifier achieves a -3 dB bandwidth covering the entire FCC UWB spectrum from 3.1 GHz to 10.6 GHz with a very high gain of approximately 70 dB. The amplifier is an area-efficient, single-inductor solution designed for TSMC 90 nm CMOS low-power process while consuming 25.1 mW from 1.2 V supply voltage.