One more way to increase the recovery softness of fast high-voltage diodes

There is a new way of increasing the softness of reverse recovery (S-factor) of high-voltage p
⁺
-p-n
^-
-n
^'
-n
⁺
diode using local reduction of life time in n part of layer adjacent to n
⁺
. Experimentally proved the possibility to reach S-factor above 2 for high-voltage diodes (Vbr ~ 4500-4800V) of such structure with snubberless recovery in circuit with inductive load and roll-off speed more than 1500A/μs.