Improvements in SOA ruggedness of 6.5 kV IGBTs

We have presented the work done on optimization of the 6.5kV IGBT device for increasing the safe operating area both for RBSOA and SCSOA. The optimization of the bipolar gain of the IGBT has been studied. We have shown that reducing gate capacitance by 50% combined with increased bipolar gain improves the short circuit robustness. The short circuit current capability of the 6.5 kV IGBT chip is significantly improved using the terrace gate structure.