Photoemission and polarized luminescence spectra of the strained semiconductor layers

Summary form only given, as follows. We report results on the detailed theoretical and experimental study of the quantum yield and polarization spectra of the electron photoemission from semiconductor heterostructures with strained semiconductor layers. We show that the tree-step diffusion model is sufficient to explain the experimental quantum yield and polarization dependencies on the excitation energy and the active layer thickness if the light band-edge absorption, the electron injection from the buffer layer and the electron depolarization in the thermalization processes are properly taken into account. We demonstrate that the parameters of the emitter can be determined from the experimental excitation spectra of the polarized luminescence of the optically oriented electrons.