Using the light-impact model for p-type and n-type poly-TFT in circuits

This paper describes and verifies a light impact model (LIM) for both p-type and n-type poly TFTs. At first the ratio of the produced current under a specific light intensity versus the `dark' current is calculated. Next, comparative results between measurements and simulated characteristics are presented for different sizes of W/L, different values of the Vds, Vgs voltages and of light intensities. Finally, the application of the LIM in the simulation of an optical-feedback driver is given.