3.3 kV punchthrough IGBT with low loss and fast switching

This paper presents a new punchthrough (PT) IGBT with a high blocking voltage of 3.3 kV. We numerically show that a high injection efficiency with a p+layer and local lifetime control in an n-layer are more effective in reducing the turn-on and turn-off losses, respectively. A p+epitaxial layer at the collector has been made in order to realize a high injection efficiency, which greatly reduced the turn-on loss, experimentally. When a local lifetime control technique is applied to this new PT IGBT, the turn-off loss is decreased by approximately 50% compared to a conventional PT IGBT with uniform lifetime control of electron irradiation. The new PT IGBT provides fast switching with rise and fall times of about 1 /spl mu/s at 125/spl deg/C. In addition, in this PT IGBT it is easy to apply a high resistivity n-layer without increasing its thickness or losing high blocking voltage in comparison with non-punchthrough (NPT) IGBT, which can get low failure rate (FIT) with cosmic ray.