Monolithic InP HEMT/HBT integrated circuit technology by selective molecular beam epitaxy

Co-integration of high performance InP HEMTs and HBTs has been achieved using selective MBE. The merged device technologies maintain the performance of their stand-alone counterparts and show excellent yield and uniformity. The first monolithic integrated circuits featuring both InP HEMTs and HBTs have been presented. The successful merging of these technologies on the same InP substrate represents a significant step towards larger scale millimeter wave integration and innovative system architectures.