Present ability of commercial molecular beam epitaxy

Summary form only given. Our entry into InP-based materials is the result of increasing demand for higher performance electronic devices. InGaAs/InAlAs High Electron Mobility Transistors (HEMTs) lattice-matched to InP exhibit simultaneously higher charge and higher mobility than similar devices in the GaAs/AlGaAs and InGaAs/GaAs/AlGaAs material systems and are thus well suited for these applications. A typical lattice-matched HEMT, for example, might have a mobility of 11,000 cm/sup 2//Vs with a sheet charge density greater than 2/spl times/10/sup 12/ cm/sup -2/, compared to a 7000 cm/sup 2//Vs mobility for the same charge in a GaAs-based PHEMT. With a pseudomorphic channel in an InGaAs/InAlAs HEMT we have pushed these numbers to 6.5/spl times/10/sup 12/ cm/sup -2/ at a mobility of 7,200 cm/sup 2//Vs. While isolated results are important to demonstrate the potential of this material system, a commercial vendor must also demonstrate uniformity and repeatability of both electrical and crystalline properties. A plot of thickness and compositional variation across a typical 3" wafer is shown, demonstrating the inherent uniformity of Molecular Beam Epitaxy (MBE) material. This underlying material uniformity-total variations of 0.1 in mole fraction and 2.6% in thickness-leads to a typical sheet resistance variation of only 0.6% across the wafer. This paper illustrates the development of our InP market and our capabilities to meet the demands of that market with commercial MBE.