Anisotropic polarization properties of GaInAsP/InP compressively-strained quantum-wire structure

Polarization dependence of 1.55 /spl mu/m wavelength GaInAsP/InP compressively-strained (CS) quantum-wire laser structures assisted by a quantum-film was measured and compared with quantum-film laser structures fabricated on the same wafer. As a result, better anisotropic polarization properties of the quantum-wire structure were obtained. PL intensity of an electric field perpendicular to the quantum-wire (Q-Wire) was about 60% of that parallel to the Q-Wire. In addition, we fabricated Q-Wire lasers with a wire width of about 25 nm. As a result, a blue shift /spl Delta/E/spl sim/10 meV and a threshold current density J/sub th/=34 A/cm/sup 2/ at 90 K were obtained.