Dynamic behaviour of the metal heterojunction bipolar transistor

In this paper the intrinsic dynamic behavior of the metal heterojunction bipolar transistor (MHBT) is studied. Non-equilibrium electron transport in the base is characterized by electroluminescence. Clear evidence of ballistic transport in MHBT's is shown even at room temperature. The ballistic length is found equal to 17.8 nm in p-InGaAs (N/sub A/=10/sup 19/ cm/sup -3/). Based on these experimental results, an analytical model is developed in order to predict the transit times in both the base and the base-collector space charge layer of the MHBTs.