Total dose effects on a FD-SOI technology for monolithic pixel sensors

A monolithic pixel detector in deep-submicron Silicon On Insulator (SOI) technology has been developed and characterized. This summary presents the first assessments of the effect of ionizing radiation as regards the total dose damage on single transistors in the technology used for the development of the first prototype chip. This work shows the decisive effect of the substrate bias condition during irradiation on the radiation induced damage on the electronics.