Plasma damage failure analysis cases study by EBIC detection on nano-probing SEM system

As the gate oxide pinhole case, to gain more insight of nature of the hillock defect, the cross-section TEM was necessary for analysis. In this work, we study new technique to detect precise failure point for TEM analysis and it combined the EBIC amplifier and nano-probing in a SEM system for PID (plasma charging induced damage) defect mode identification in the Memory Cell IC. And EBIC signal observation at different beam accelerating voltage energy and varied insulator thicknesses are also discussed.