An innovative method for fast TEM sample transfer and immediate analysis thereafter

Both process control and process development in the high performance semiconductor industry require more and more TEM analyses. This is mainly driven by the shrinkage in feature size and by the introduction of new material sets. As SEM analyses are executed routinely and in a high volume mode, the migration to TEM based analysis also requires high sample throughput. One throughput limiter in TEM analysis is sample drift after sample loading. It is not possible to perform high resolution TEM imaging or do analytical TEM work like EELS, EDX, Tomography, etc. before the thermal equilibrium inside the sample stage is achieved. Using improved FIB to TEM sample connectivity has significantly improved the time to thermal equilibrium, as well as enabling the move from 5% Liftout to more than 55% Lamella Liftout today.