Capping layer induced degradations in nano MOSFETs with scaled IL

EOT scale down is a critical issue in LaO/AlO capped Hf-based devices, because it will result in serious V
_FB
roll-off. The incorporation of capping layer induces more traps in the gate stack. These traps are oxygen vacancy related defects and are sensitive to reliability stress. By using the oxygen vacancies detection method, we demonstrate that these oxygen vacancy defects are near to IL (SiO
₂
). In addition, the interface states are found strongly dependent on the V
_FB
roll-off, especially for IL scaled device.